Ion implantation is a very important technology in the manufacture of modern integrated circuits that utilize ion implanters to achieve semiconductor doping, that is, the use of tungsten wire as the cathode emission electrons to bombard the gas molecules containing specific impurity elements to produce ionized specific impurities The atoms are accelerated by the electrostatic field to the surface of the silicon monocrystalline wafer and into the interior of the semiconductor, changing the conductive properties and eventually forming the transistor structure.

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